●高集電極-發射極維持電壓 -
V CEO(sus) = 100 Vdc (Min) MJE243, MJE253
●高直流電流增益 @ I C = 200 mAdc
h FE = 40-200
h FE = 40-120 - MJE243、MJE253
●低集電極-發射極飽和電壓 -
V CE(sat) = 0.3 Vdc (Max) @ I C = 500 mAdc
●高電流增益帶寬積 -
f T = 40 MHz (Min) @ I C = 100 mAdc
●用于低泄漏的環形結構
I CBO = 100 nAdc (Max) @ 額定 V CB
●提供無鉛封裝